Siemens SITRANS P500 Kompaktbetriebsanleitung Seite 31

Certificates and approvals
Connection
Effective inner inductance
Effective inner capacitance
● Flameproof enclosure encapsulation
"d"
Designation
Permitted ambient temperature
Connection
● Dust explosion protection for Zone 20
Designation
Permitted ambient temperature
max. surface temperature
Connection
Effective inner inductance
Effective inner capacitance
● Dust explosion protection for Zone
21/22
Designation
Connection
● Type of protection "n" (Zone 2)
Designation
Connection "nA, ic"
Connection "nL"
Effective inner inductance
Effective inner capacitance
● Explosion protection for USA (to FM)
● Certificate of Compliance
Marking (XP/DIP) or (IS)
Permitted ambient temperature
Entity parameters
SITRANS P500 with HART
A5E02344532-03, 04/2013
To a certified intrinsically safe circuit with the max. values:
U = 30 V, I = 100 mA,
i i
P = 750 mW, R = 300 Ω
i i
L = 400 μH
i
C = 6 nF
i
BVS 09 ATEX E 027
II 1/2 G Ex d IIC T4/T6
-40 ... +85 °C (-40 ... +185 °F) temperature class T4
-40 ... +60 °C (-40 ... +140 °F) temperature class T6
To a circuit with the operating values:
U = 10.5 ... 45 V DC
m
PTB 09 ATEX 2004 X
II 1 D Ex iaD 20 T 120 °C
-40 ... +85 °C (-40 ... +185 °F)
120 °C (248 °F)
To a certified intrinsically safe circuit with the max. values:
U = 30 V, I = 100 mA,
i i
P = 750 mW, R = 300 Ω
i i
L = 400 μH
i
C = 6 nF
i
BVS 09 ATEX E 027
II 2 D Ex tD A21 IP68 T 120 °C Ex ia D21
To a circuit with the operating values:
U = 10.5 ... 45 V DC; P
m
PTB 09 ATEX 2004 X
II 3 G Ex nA II T4/T6;
II 2/3 G Ex ib/nL IIC T4/T6;
II 2/3 G Ex ib/ic IIC T4/T6
U = 45 V DC
m
U = 45 V
n
L = 400 μH
i
C = 6 nF
i
No. 3033013
XP CL I, DIV 1, GP ABCD T4/T6;
DIP CL II, III, DIV 1, GP EFG T4/T6;
IS CL I, II, III, DIV 1, GP ABCDEFG T4
CL I, Zone 0, AEx ia IIC T4;
CL I, Zone 1, AEX ib IIC T4
T = T4: -40 ... +85 °C (-40 ... +185 °F)
a
T = T6: -40 ... +60 °C (-40 ... +140 °F)
a
To "control drawing":
U = 30 V, I = 100 mA,
m m
P = 750 mW, L = 400 μH, C
i i
= 1.2 W
max
= 6 nF
i
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