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Verfügbare Sprachen
Verfügbare Sprachen
Specifications
Headphones
Transducer principle
Frequency response
Impedance
Characteristic SPL (1 kHz, 1 mW)
Contact pressure
Microphone
Transducer principle
Frequency response
Sensitivity (free field, no load)
Electrical impedance (1 kHz)
Min. terminating impedance
Signal-to-noise ratio as per DIN 45590
Supply voltage for amplifier / microphone
Dynamic range
Amplifier
Operating voltage
Dynamic range
Gain (20 mA) R
Noise voltage as per DIN 45405
General
Connectors
Cable length
Total weight without cable and amplifier
Temperature range
Climatic rating
Circuit Diagram
HME 410-1
microphone
rd
screen
bl
rd
screen
bl
rd
screen
bl
rd
screen
bl
C7
R7
R4
R5
C7
R7
R4
R8
C4
R5
R2
R8
C2
C6
R2
D2
C2
D1
C6
D2
D1
rd
bl
screen
rd
bl
Sennheiser electronic GmbH & Co. KG
30900 Wedemark, Germany
www.sennheiser.com
= 350 Ω
I
left
right
headphone
headphone
capsule,
capsule,
left
right
ye
bk
rd
bk
ye
bk
rd
bk
ye
bk
rd
bl
ye
bk
rd
bl
R3
C5
C3
R6
R3
C5
C1
C4
C3
T2
R6
T1
C1
T2
T1
R9
C8
R1
R9
C8
R1
ye
rd
bk
bl
ye
rd
bk
bl
wh
screen
Phone +49 (5130) 600-0
Fax +49 (5130) 600-300
dynamic
20 – 18,000 Hz
600 Ω per side
100 dB ± 3 dB
approx. 2.5 N
back-electret condenser mic capsule, noise-compensated
100 – 3.400 Hz
10 mV/Pa ± 1.5 dB
approx. 1 kΩ
4.7 kΩ
≥ 64 dB
3.5 – 15 V / approx. 200 µA
THD = 1 % at approx. 125 dB / U
± 12 V / approx. 15 mA
THD = 1 % at U
in
approx. 18 dB
approx. 150 µV
410-1: Typ FFP-3S-310
410-3: Typ FGG-1B-310
approx. 1.8 m
130 g
storage: –20 °C to +70 °C
operation: –10 °C to +60 °C
storage at up to +40 °C and 90 % relative humidity
HME 410-3
microphone
screen
rd
rd
screen
gn
wh
gn
rd
= 9 V
B
= 650 mV
headphone
headphone
capsule,
capsule,
left
right
ye
bk
ye
bk
rd
ye
bk
bk
rd
ye
screen
Printed in Germany
93294 Publ. 08/03
wh
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