6. TECHNICAL SPECIFICATIONS
MOS-FET Amplifier
Rated power output
(*THD/14.4 V)
BJT amplification
circuitry with MOS-FET
Variable lowpass
crossover
(12 dB/oct.)
Variable subsonic filter
Variable input sensitivity
Damping factor @ 4 ohms
Signal to noise ratio
20 mm² direct input
power terminals
Bass level remote control
Dimensions
(W x H x D)
30
RN-1600
1-Channel (Mono)
195 Wrms x 1 @ 4 Ω (<0.1 %*)
145 Wrms x 2 @ 4 Ω (<0.1 %*)
205 W
x 1 @ 4 Ω (<1.0 %*)
155 W
300 Wrms x 1 @ 2 Ω (<0.1 %*)
480 W
350 W
x 1 @ 2 Ω (<1.0 %*)
240 W
500 W
x 1 @ 1 Ω (<1.0 %*)
•
30 – 250 Hz
10 Hz – 40 Hz
0.2 – 6 V
> 200
> 85 dB
•
•
363 x 56 x 226 mm
RN-2160
RN-4110
2-Channel
100 Wrms x 4 @ 4 Ω (<0.1 %*)
x 2 @ 4 Ω (<1.0 %*)
105 W
x 1 @ 4 Ω (<1.0 %*)
300 W
x 2 @ 2 Ω (<1.0 %*)
150 W
•
10/30 – 150 Hz
10/30 – 150 Hz
n.a.
0.2 – 6 V
> 200
> 85 dB
•
•
363 x 56 x 226 mm
395 x 56 x 226 mm
RN-460-200
4-
Channel
65 Wrms x 4 + 180 Wrms x 1 @ 4 Ω (<0.1 %*)
x 4 @ 4 Ω (<1.0 %*)
70 W
x 4 + 195 W
x 2 @ 4 Ω (<1.0 %*)
70 Wrms x 4 + 290 Wrms x 1 @ 2 Ω (<0.1 %*)
x 4 @ 2 Ω (<1.0 %*)
85 W
x 4 + 310 W
•
n.a.
0.2 – 6 V
> 200
> 85 dB
•
•
435 x 56 x 226 mm
5-
Channel
x 1 @ 4 Ω (<1.0 %*)
x 1 @ 2 Ω (<1.0 %*)
•
30/50 – 150 Hz
n.a.
0.2 – 6 V
> 200
> 85 dB
•
•