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Positions Listing
REVOX AG
Idx. Pos. No.
Part No./Index
Qty.
Value/Name
Part Description
1
C159
59.06.0224
01
0.22 uF
C-PE 0.22 pF 10% 63V
3.5*7.5* 8.0
1
Cl60
59.22.8479
01
4.7 uF
C-EL
4.7pF 50V
6 * 12 RMS5
1
C161
59.05.1472
O1
4700 pF
C-PP
4700 pF, 63 V,
1%, rad
7 * 12.5
1
C162
39.05.6153
01
0.015 uF
C-MKP 0.015 pF, 400 V, 10 %
1
C163
59.06.5332
O1
3300 pF
C-PE 3300 pF 5% 63V
2/97 7-810
1
Cl64
59.06.0104
01
100 nF
C-PE
0.1 uF 10% 63V
2.5*7.5* 8.0
1
C165
59.06.0682
01
6800 pF
C-PE 6800 pF 10% 63V
2.9" 7,9" 30
1
C166
59.06.0472
O01
4.7nF
C-PE 4700 pF 10% 63 V
29°75" 8:0
1
C167
59.06.5332
01
3300 pF
C-PE 3300 pF 35% 63V
20°10 O0
1
C168
59.05.1472
O1
4700 pF
C-PP
4700 pF, 63 V, 1%, rad
7* 12.5
1
C169
39.22.8109
01
] pF
C-EL
I lpF 50V
6 * 12 RM5
1
C170
59.22.8479
O1
4.7 uF
C-EL
4.7pF 50V
6 *12 RM5
1
Cl7l
59.34.4151
01
150 pF
C-CER
150 pF, 5%, 63V, N 750
1
C172
59.06.5102
01
1000 pF
C-PE 1000 pF, 5%, 63V , 2.5*7.5* 8.0
i
a3
59.06.5102
01
1000 pF
C-PE 1000 pF, 5%, 63V , 2.5*7.5* 8.0
1
C174
59.34.4151
01
150 pF
C-CER
150 pF, 5%, 63V, N 750
i
"CRIS
39.06.0104
01
100 nF
C-PE
0.1 pF 10% 63V_
2.5*7.5* 8.0
1
C176
59.06.5102
01
— 1000 pF
C-PE
1000 pF, 5%, 63V , 2.5*7.5* 8.0
bs
sCisi
59.06.5102
01
1000 pF
C-PE 1000 pF, 5%, 63V , 2.5*7.5* 8.0
-
1
C178
59.06.0104
01
100 nF
C-PE
0.1 pF 10% 63V
2.5*7,5* 8.0
5
C179
59.34.2470
01
47 pF
C-CER
47 pF, 5%, 63V, N 150
5
C180
59.34.2470 01
47 pF
C-CER
47pF, 5%, 63V, N 150
1
Dl
50.04.0122
01
IN4001
Diode, Silicon
1
D2
50.04.0122 01
IN4001
Diode, Silicon
1
D3
50.04.0122 01
IN4001
Diode, Silicon
1
D4
50.04.0125
01
IN4448
Diode, silicon, 75 V, 150 mA
1
D5
30.04.0125
01
IN4448
Diode, silicon, 75 V, 150 mA
1
D6
30.04.0125
O]
IN4448
Diode. silicon, 75 V, 150 mA
1
D7
50.04.0122
01
IN4001
Diode, Silicon
1
D8
50.04.0125
01
IN4448
Diode, silicon, 75 V, 150 mA
1
pg
50.04.0125
01
IN4448
Diode. silicon, 75 V, 150 mA
1
D10
50.04.0125
01
IN4448
Diode, silicon, 75 V, 150 mA
1
DI
50.04.0125
O01
IN4448
Diode. silicon, 75 V, 150 mA
212
50.04.0125
O1 |
IN4448
Diode, silicon, 75 V, 150 mA
1
DI13
50.04.0122
O01
IN+4001
Diode. Silicon
l1
Di4
50.04.0122
O]
IN4001
Diode. Silicon
i
D7
50.04.0127 01
BATS85
Low Power Schottky-Diode
1
DI8s
30.04.0127
Q1
BATS85
Low Power Schottky-Diode
}
.DY9
50.04.0122
01
IN4001
Diode. Silicon
1
D20
50.04.0125
01
IN4448.
Diode. silicon. 75 V. 150 mA
1
D21
50.04.0125
01
IN4448
Diode. silicon. 75 V. 150 mA
1
D22
50.04.0127 O1
BATS85
Low Power Schottky-Diode
1
23
50.04.0127 01
BAT85
Low Power Schottky-Diode
I
D24
50.04.0127
O1
BATS85
Low Power Schottky-Diode
1
D25
50.04.0127
01
BAT85
Low Power Schottky-Diode
2
D26
30.04.0125
01
IN4448
Diode. silicon. 75 V. 150 mA
2
D27
50.04.0125
O1
IN4448
Diode. silicon. 75 V, 150 mA
2
D28
50.04.0125
Ol
IN4448
Diode. silicon. 73 V. 150 mA
2
D29
50.04.0125
O1
IN4448
Diode. silicon. 75 V. 150 mA
2
D3
— 6-30.04.0125 01
IN4448
Diode. silicon. 75 V, 150 mA
1l
D31
50.04.0122
01
IN4001
Diode. Silicon
1
DVI1
50.0+.1144
01
8V2
Zener-Diode,
500 mW,
8.2 V,
5.1 * 2.3 mm
|
Main Board B21
- Creation Date: 13.Jul.1993
Last Change: 30.Apr.1994
|Designer:
SI
1.721.601-00
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